Samsung begins production of 3nm chips

Samsung Electronics announced that it has begun production of initial chips for 3nm process nodes that apply the Gate All Around (GAA) transistor architecture.

Samsung’s GAA technology, Multi-Bridge-Cchannel FET (MBCFET), counters FinFET performance limitations, improving power efficiency by lowering supply voltage levels while improving performance by increasing drive current capacity. Said the Korean. High-tech company.

Samsung said it has launched the first application of nanosheet transistors with semiconductor chips for high-performance, low-power computing applications and plans to extend them to mobile processors.

“Samsung continues to take leadership in applying next-generation technologies such as foundry industry’s first High-K metal gates, FinFETs and EUV to manufacturing, and is growing rapidly. The world’s first 3nm process. We aim to continue this leadership at Siyoung Choi, president and head of Samsung Electronics’ foundry business, using MBC FETs, as quoted in the company’s announcement. ” “We will continue to innovate aggressively in competitive technology development and build processes that help accelerate technology maturity.”

Design technology optimization for maximized PPA

Samsung’s unique technology utilizes nanosheets with wider channels, enabling higher performance and higher energy efficiency compared to GAA technology, which uses nanowires with narrower channels. Said. Utilizing 3nm GAA technology, Samsung will be able to adjust the channel width of nanosheets to optimize power usage and performance to meet the needs of different customers.

In addition, GAA’s design flexibility is highly beneficial to co-optimization of design techniques (DTCO) and helps to enhance power, performance, and area (PPA) benefits. Compared to the 5nm process, the first generation 3nm process can reduce power consumption by up to 45%, improve performance by 23% and reduce area by 16% compared to 5nm. Second-generation 3nm processes, on the other hand, reduce power consumption by up to 45%. According to Samsung, it will improve performance by 50%, improve performance by 30% and reduce area by 35%. Samsung begins production of 3nm chips

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